unisonic technologies co., ltd UT75N03 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-327.c 75a, 30v n-channel power mosfet ? description the utc UT75N03 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable fo r use as a load switch or in pwm applications. ? features * r ds(on) < 7m ? @v gs =10v * r ds(on) <10m ? @v gs =4.5v ? symbol 1.gate 3.source 2.drain to-220 to- 251 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT75N03l-ta3-t UT75N03g-ta3-t to-220 g d s tube UT75N03l-tm3-t UT75N03g-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source
UT75N03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-327.c ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 75 a pulsed drain current (note 2) i dm 225 a single pulsed avalanche current (note 3) i as 100 a single pulsed avalanche energy (note 3) e as 228 mj to-220 75 power dissipation (t c = 25 ) to-251 p d 89 w junction temperature t j +150 c storage temperature t stg -55 ~ +175 c note: 1. 2. 3. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. pulse width limited by t j(max) l=20 h, i as =100a, v dd =24v, r g =25 ? , starting t j =25 ? thermal data parameter symbol ratings unit to-220 62.5 junction to ambient to-251 ja 110 c/w to-220 2.0 junction to case to-251 jc 1.4 c/w
UT75N03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-327.c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a forward v gs =20v, v ds =0v 100 na gate-source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics ( note ) gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =30a 5 7 m ? static drain - source on-resistance r ds(on) v gs =4.5v, i d =20a 7 10 m ? dynamic parameters input capacitance c iss 3298 pf output capacitance c oss 1400 pf reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 287 pf switching parameters turn-on delay time t d(on) 20 38 ns turn-on rise time t r 12 23 ns turn-off delay time t d(off) 113 198 ns turn-off fall-time t f v dd =15v, i d =60a, v gs =10v, r gen =6 ? 40 78 ns total gate charge q g 48 55 nc gate-source charge q gs 10 nc gate-drain charge q gd v ds =15v, v gs =10v, i d =75a 27 nc drain-source diode characteristics and maximum ratings diode forward voltage ( note ) v sd v gs =0v, i s =75a 1.5 v maximum body-diode continuous current i s 75 a note: pulse test: pulse width 300 s, duty cycle 2%. utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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